Specific Process Knowledge/Etch/III-V ICP: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP click here]'''
 
<br> {{CC1}}
[[Image:III-VICP.jpg |300x300px|thumb|The SPTS III/V ICP in the Danchip cleanroom B-1]]
[[Image:III-VICP.jpg |300x300px|thumb|The SPTS III/V ICP in the DTU Nanolab cleanroom B-1]]


== The III-V ICP ==
== The III-V ICP ==


The III-V ICP is a state-of-the-art etch tool. The combination of advanced hardware and software enables you to either use the optimized standard processes or to tailor etch processes for your specific needs. The tool can be used for etching of different materials, but is primarily intented for etching of III-V materials.  
Name: PRO ICP <br>
Vendor: STS (now SPTS) <br>
The III-V ICP is a state-of-the-art etch tool. The combination of advanced hardware and software enables you to either use the optimized standard processes or to tailor etch processes for your specific needs. The tool can be used for etching of different materials, but is primarily intented for etching of III-V materials. There are two endpoint systems connected to the system. An Optical End Point System (OES) and a LASER End Point system (LEP). Information on these can be found here: [[Specific Process Knowledge/Etch/DryEtchProcessing]]


'''The user manual, user APV and contact information can be found in LabManager:'''
'''The user manual, user APV and contact information can be found in LabManager:'''


Equipment info in [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=268| LabManager]
Equipment info in [http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=268| LabManager]


==Process information==
==Process information==
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*[[/GaAs-AlGaAs | GaAs/AlGaAs etch ]]
*[[/GaAs-AlGaAs | GaAs/AlGaAs etch ]]
*[[/GaN | GaN etch ]]
*[[/GaN | GaN etch ]]
*[[/SiO2|SiO2 etch]]
*[[Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with III-V ICP|Al2O3 etch]]


==An overview of the performance of the III-V ICP and some process related parameters==
==An overview of the performance of the III-V ICP and some process related parameters==
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|style="background:LightGrey; color:black"|Chiller temperature
|style="background:LightGrey; color:black"|Chiller temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Range 0-180 degrees
* Range 20-180 degrees
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
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== Additional information ==


=== Endpoint detection ===
The III-V ICP is equipped with two endpoint detection systems - an optical endpoint detection system and a laser interferometric system. Click [[Specific Process Knowledge/Etch/OES |'''here''']] to access the page common to all dry etch tools that are equipped with an optical endpoint detection system.


== Additional information ==


'''Wafer bonding'''
=== Wafer bonding ===


To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].

Latest revision as of 09:35, 10 February 2023

Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal

The SPTS III/V ICP in the DTU Nanolab cleanroom B-1

The III-V ICP

Name: PRO ICP
Vendor: STS (now SPTS)
The III-V ICP is a state-of-the-art etch tool. The combination of advanced hardware and software enables you to either use the optimized standard processes or to tailor etch processes for your specific needs. The tool can be used for etching of different materials, but is primarily intented for etching of III-V materials. There are two endpoint systems connected to the system. An Optical End Point System (OES) and a LASER End Point system (LEP). Information on these can be found here: Specific Process Knowledge/Etch/DryEtchProcessing

The user manual, user APV and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Etch recipes

An overview of the performance of the III-V ICP and some process related parameters

Purpose Dry etch of
  • III-V materials such as GaAs, InP, GaN, AlGaAs, InGaAs or InGaAsP
  • Other materials such as Si, SiO2 or polymers on samples with III-V materials
Performance Etch rates
  • InP: ~500 nm/min (depending on features size and etch load)
  • GaAs : 5-500 nm/min (depending on etch process, features size and etch load)
  • GaN: ~500 nm/min (depending on features size and etch load)
Anisotropy
  • Good
Process parameter range Process pressure
  • ~0.1-100 mTorr
RF Generators
  • Coil power 1.5 kW
  • Platen power 600 W
Chiller temperature
  • Range 20-180 degrees
Gas flows
N2: 0-100 sccm Ar: 0-100 sccm
SF6: 0-100 sccm O2: 0-100 sccm
CF4: 0-100 sccm H2: 0-100 sccm
CH4: 0-100 sccm BCl3: 0-100 sccm
Cl2: 0-100 sccm HBr: 0-100 sccm
Substrates Batch size
  • 1 4" wafer per run
  • 1 2" wafer per run
  • Or several smaller pieces on a carrier wafer with recess
Substrate material allowed
  • III-V wafers
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist
  • E-beam resist
  • DUV resist

Additional information

Endpoint detection

The III-V ICP is equipped with two endpoint detection systems - an optical endpoint detection system and a laser interferometric system. Click here to access the page common to all dry etch tools that are equipped with an optical endpoint detection system.


Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.

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