Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

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==Etching of Gold==
==Etching of Gold==


Etching of Gold can be done either by wet etch or by sputtering with ions.
Etching of Gold can be done either by wet etch, or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of Au using Iodine based chemistry
|Wet etch of Au using iodine based chemistry
|Wet etch of Au using Aqua Regina
|Wet etch of Au using Aqua Regina
|Sputtering of Au - pure physical etch
|Sputtering of Au - pure physical etch
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*~100nm/min
*~100nm/min
|
|
*fast etch, mainly used for complete removal of metals
*680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
|
|
*~55nm/min (acceptance test)  
*~55nm/min (acceptance test)  
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*Photoresist
*Photoresist
|
|
*None (only used for stipping Au)
*None (mainly used for stripping Au)
|
|
*Any material that is allowed in the chamber, photoresists included  
*Any material that is allowed in the chamber, photoresists included  

Latest revision as of 15:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

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Feedback to this page: click here

Etching of Gold

Etching of Gold can be done either by wet etch, or by sputtering with ions.


Comparison of Gold Etch Methods

Au wet etch 1 Au wet etch 2 IBE (Ionfab300+)
Generel description Wet etch of Au using iodine based chemistry Wet etch of Au using Aqua Regina Sputtering of Au - pure physical etch
Etch rate range
  • ~100nm/min
  • 680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
  • ~55nm/min (acceptance test)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (angles sidewalls, typical around 70 dg)
Masking material
  • Photoresist
  • None (mainly used for stripping Au)
  • Any material that is allowed in the chamber, photoresists included
Substrate size
  • Any size and number that can go inside the beaker in use
  • Any size and number that can go inside the beaker in use

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape