Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

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==Etching of Gold==
==Etching of Gold==
Etching of Gold is done wet at Danchip. We have two different solutions:


# KI:I<math>_2</math>:H<math>_2</math>O - 400g:100g:400ml?
Etching of Gold can be done either by wet etch, or by sputtering with ions.
# HNO<math>_3</math>:HCl - 1:3
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
<br clear="all" />


==Comparison of Gold Etch Methods==


===Comparing the two solutions===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Iodine based gold etch
! Aqua Regia (Kongevand)
|-
|General description
|
Etch of pure Gold
|
Etch of pure Gold
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|KJJ<math>_2</math>:H<math>_2</math>O<math>  100g:25g:500ml
!
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 2]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Au using iodine based chemistry
|Wet etch of Au using Aqua Regina
|Sputtering of Au - pure physical etch
|-


|-
|-
 
|-style="background:LightGrey; color:black"
|Possible masking materials:
!Etch rate range
|
*~100nm/min
|
|
Photoresist (1.5 µm AZ5214E)
*680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
|
|
Photoresist (1.5 µm AZ5214E)
*~55nm/min (acceptance test)  
|-
|-
|Etch rate
 
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
~100 nm/min (Pure Al)
*Isotropic
|
|
~60(??) nm/min
*Isotropic
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
|Batch size
 
|-style="background:LightGrey; color:black"
!Masking material
|
|
1-25 wafers at a time
*Photoresist
|
*None (mainly used for stripping Au)
|
|
1-25 wafer at a time
*Any material that is allowed in the chamber, photoresists included
|-
|-
|Size of substrate
 
 
|-
|-style="background:WhiteSmoke; color:black"
!Substrate size
|
|
4" wafers
*Any size and number that can go inside the beaker in use
|
|
4" wafers
*Any size and number that can go inside the beaker in use
 
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|Allowed materials
 
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
*Aluminium
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 15:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Gold

Etching of Gold can be done either by wet etch, or by sputtering with ions.


Comparison of Gold Etch Methods

Au wet etch 1 Au wet etch 2 IBE (Ionfab300+)
Generel description Wet etch of Au using iodine based chemistry Wet etch of Au using Aqua Regina Sputtering of Au - pure physical etch
Etch rate range
  • ~100nm/min
  • 680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
  • ~55nm/min (acceptance test)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (angles sidewalls, typical around 70 dg)
Masking material
  • Photoresist
  • None (mainly used for stripping Au)
  • Any material that is allowed in the chamber, photoresists included
Substrate size
  • Any size and number that can go inside the beaker in use
  • Any size and number that can go inside the beaker in use

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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