Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

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Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.  
Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.  
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.




*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]
*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]]

Latest revision as of 15:36, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching Al2O3 can be done both chemically (wet) and by dry etching. Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.


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