Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions

Latest revision as of 15:31, 6 February 2023

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Thickness measurer

There are 2 thickness measurers in the cleanroom, both positioned in cleanroom D-3. The Thickness measurer is for measuring all sorts of samples. The thickness measurer (wafers) is solely for measuring the thickness of wafers or depths of grooves on wafers.

During a KOH etch it can be helpful to ensure no over-etching by making a thickness measurement during the etching.

The user manual, technical information and contact information can be found in LabManager:

Thickness measurer Thickness measurer (wafers)

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the Thickness measurer

The measured standard thickness is 0.1 mm. The measured result has to be within ± 0.005 mm. The QC is preformed once a year.

Equipment performance and process related parameters

Purpose	Thickness measurer	Wafer thickness Depths of larger grooves Heigth of larger samples
Performance	Thickness resolution	< 1 µm
Substrates	Batch size	One sample
Substrates	Substrate materials allowed	No restrictions

Purpose	Thickness measurer (wafers)	Wafer thickness Depths of larger grooves
Performance	Thickness resolution	< 1 µm
Substrates	Batch size	One sample
Substrates	Substrate materials allowed	Only wafers

@@ Line 1: / Line 1: @@
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
+'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Thickness_Measurer click here]'''
 ==Thickness measurer==
-[[Image:Thicknessmeasurer2007.jpg|thumb|300x300px|Digital Thickness Measurer. Positioned in cleanroom 4]]
+[[Image:Thicknessmeasurer2007.jpg|thumb|300x300px|Thickness Measurer. Positioned in cleanroom D-3]]
-The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.
+There are 2 thickness measurers in the cleanroom, both positioned in cleanroom D-3. The Thickness measurer is for measuring all sorts of samples. The thickness measurer (wafers) is solely for measuring the thickness of wafers or depths of grooves on wafers.
+During a KOH etch it can be helpful to ensure no over-etching by making a thickness measurement during the etching.
-Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.
 '''The user manual, technical information and contact information can be found in LabManager:'''
 '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=198 Thickness measurer]'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=447 Thickness measurer (wafers)]'''
 ==Quality Control - Recipe Parameters and Limits==
@@ Line 20: / Line 23: @@
 |-
 |
-The measured standard thickness is 0.1 mm. The measured result have to be within &plusmn; 0.005 mm. The QC is preformed ones a year.
+The measured standard thickness is 0.1 mm. The measured result has to be within &plusmn; 0.005 mm. The QC is preformed once a year.
 *[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1831&mach=198 The QC procedure]<br>
-*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=2062 The newest QC data]<br>
+*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=198 The newest QC data]<br>
 |}
@@ Line 35: / Line 38: @@
 Thickness measurer
 |style="background:WhiteSmoke; color:black"|
-*Wafer
+*Wafer thickness
 *Depths of larger grooves
-*Heigth of larger mesas
+*Heigth of larger samples
 |-
 !style="background:silver; color:black" align="center"|
@@ Line 44: / Line 47: @@
 Thickness resolution
 |style="background:WhiteSmoke; color:black"|
-*>5 µm
+*< 1 µm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|
-Process parameter range
+Substrates
+|style="background:LightGrey; color:black"|
+Batch size
+|style="background:WhiteSmoke; color:black"|
+*One sample
+|-
+| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:WhiteSmoke; color:black"|
+*No restrictions
+|-
+|}
+{| border="2" cellspacing="2" cellpadding="3"
+|-
+!style="background:silver; color:black;" align="center"|
+Purpose
 |style="background:LightGrey; color:black"|
-Process Temperature
+Thickness measurer (wafers)
 |style="background:WhiteSmoke; color:black"|
-*Room temperature
+*Wafer thickness
+*Depths of larger grooves
 |-
-|style="background:LightGrey; color:black"|Process pressure
+!style="background:silver; color:black" align="center"|
+Performance
+|style="background:LightGrey; color:black"|
+Thickness resolution
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*< 1 µm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|
@@ Line 66: / Line 92: @@
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*No restriction.
+*Only wafers
 |-
 |}