Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions

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=Etch slow=
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''
{{CC-bghe1}} <br>
=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=


This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.


{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
Line 7: Line 9:
!Si etch test1
!Si etch test1
!Si etch test2
!Si etch test2
!Si etch test3
|-
!Important note
|
|This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20
|
|-
|-
|Neutalizer current [mA]
|Neutalizer current [mA]
|450
|450
|250
|250
|450
|-
|-
|RF Power [W]
|RF Power [W]
|1200
|1200
|1000
|1000
|1200
|-
|-
|Beam current [mA]
|Beam current [mA]
|400
|400
|200
|200
|400
|-
|-
|Beam voltage [V]
|Beam voltage [V]
|400
|400
|200
|200
|400
|-
|-
|Beam accelerator voltage
|Beam accelerator voltage
|400
|400
|200
|200
|400
|-
|-
|Ar flow to neutralizer [sccm]
|Ar flow to neutralizer [sccm]
|6.0
|6.0
|6.0
|6.0
|6.0
|-
|-
|Ar flow to beam [sccm]
|Ar flow to beam [sccm]
|6.0
|6.0
|6.0
|6.0
|6.0
|-
|-
|Rotation speed [rpm]
|Rotation speed [rpm]
|20
|20
|20
|20
|20
|-
|-
|Stage angle [degrees]
|Stage angle [degrees]
|10
|10
|10
|10
|10
|-
|-
|Platen temp.  [dg. Celcius]
|Platen temp.  [dg. Celcius]
|15
|15
|15
|15
|15
Line 51: Line 69:
|37.5
|37.5
|37.5
|37.5
|37.5
|-
|Etch material
|Si
|Si
|Si
|-
|-
|'''Results'''
|'''Results'''
|'''vvv'''
|'''vvv'''
|'''vvv'''
|'''vvv'''
|-
|-
Line 58: Line 84:
|40
|40
|40
|40
|7:15
|-
|-
|Etch rate in Si [nm/min]
|Etch rate in Si [nm/min]
|19.7
|19.7
|3.58
|3.58
|19.3
|-
|-
|Total time in Acetone + ultrasound [min]
|Total time in Acetone + ultrasound [min]
|17
|17
|10
|10
|20
|-
|-
|Was the resist completely removed after acetone + ultrasound?
|Was the resist completely removed after acetone + ultrasound?
|no
|no
|yes
|yes
|yes (almost)
|-
|-
|}
|}

Latest revision as of 14:44, 6 February 2023

Feedback to this page: click here This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Etch slow (this was tested in 2012 by bghe@nanolab)

This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter Si etch test1 Si etch test2 Si etch test3
Important note This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20
Neutalizer current [mA] 450 250 450
RF Power [W] 1200 1000 1200
Beam current [mA] 400 200 400
Beam voltage [V] 400 200 400
Beam accelerator voltage 400 200 400
Ar flow to neutralizer [sccm] 6.0 6.0 6.0
Ar flow to beam [sccm] 6.0 6.0 6.0
Rotation speed [rpm] 20 20 20
Stage angle [degrees] 10 10 10
Platen temp. [dg. Celcius] 15 15 15
He cooling pressure [mTorr] 37.5 37.5 37.5
Etch material Si Si Si
Results vvv vvv vvv
Etch time [min] 40 40 7:15
Etch rate in Si [nm/min] 19.7 3.58 19.3
Total time in Acetone + ultrasound [min] 17 10 20
Was the resist completely removed after acetone + ultrasound? no yes yes (almost)
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