Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow

Feedback to this page: click here This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Etch slow (this was tested in 2012 by bghe@nanolab)

This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter	Si etch test1	Si etch test2	Si etch test3
Important note		This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20
Neutalizer current [mA]	450	250	450
RF Power [W]	1200	1000	1200
Beam current [mA]	400	200	400
Beam voltage [V]	400	200	400
Beam accelerator voltage	400	200	400
Ar flow to neutralizer [sccm]	6.0	6.0	6.0
Ar flow to beam [sccm]	6.0	6.0	6.0
Rotation speed [rpm]	20	20	20
Stage angle [degrees]	10	10	10
Platen temp. [dg. Celcius]	15	15	15
He cooling pressure [mTorr]	37.5	37.5	37.5
Etch material	Si	Si	Si
Results	vvv	vvv	vvv
Etch time [min]	40	40	7:15
Etch rate in Si [nm/min]	19.7	3.58	19.3
Total time in Acetone + ultrasound [min]	17	10	20
Was the resist completely removed after acetone + ultrasound?	no	yes	yes (almost)