Specific Process Knowledge/Etch: Difference between revisions

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==Wet etch or dry etch==
{{Feedback link|Page_name=Specific_Process_Knowledge/Etch}} <br>
Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.  
 
 
{{CC1}}
 
=Wet etch or dry etch=
Etching at Nanolab Fabrication can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.  


'''Advantages of wet chemistry over dry etch techniques are:'''  
'''Advantages of wet chemistry over dry etch techniques are:'''  
*An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.  
*An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.  
*Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
*Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
*Easy to start op new etch solutions.
*Easy to start up new etch solutions.


'''Advantages of dry etch over wet chemistry:'''
'''Advantages of dry etch over wet chemistry:'''
*Anisotropic etch can be done.
*Anisotropic etch can be done.
*The etch do not attach the backside of the sample.
*The etch does not attack the backside of the sample.
 
''' Dry etch Tool Package Training '''
*[[LabAdviser/Courses/TPT_Dry_Etch|Dry etch TPT info]]


== Choose material to be etched ==
== Choose material to be etched ==
[http://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=2&name=180612_III-V_exoticall_MH.xlsx Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required]


*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium]]
{| {{table}}
| align="left" valign="top"  style="background:LightGray"|''' Dielectrica'''
| align="left" valign="top" style="background:#DCDCDC;"|''' Semicondutors'''
| align="left" valign="top" style="background:LightGray"|''' Metals'''
| align="left" valign="top" style="background:#DCDCDC;"|''' Alloys'''
| align="left" valign="top" style="background:LightGray"|''' Polymers'''
|-valign="top"
|style="background: LightGray"|
*[[/Etching of Silicon Nitride|Silicon Nitride]]
*[[/Etching of Silicon Oxide|Silicon Oxide]]
*[[/Titanium Oxide|Titanium Oxide]]
*[[/Aluminum Oxide|Aluminum Oxide]]
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)''
|style="background: #DCDCDC"|
*[[/Etching of Silicon|Silicon]]
*[[/Wet III-V Etches|InP]]
*[[/Wet III-V Etches|GaAs]]
*[[/Wet III-V Etches|InGaAs]]
*[[/Wet III-V Etches|AlGaAs]]
|style="background: LightGray"|
*[[/Etching of Aluminium|Aluminium]]
*[[/Etching of Chromium|Chromium]]
*[[/Etching of Chromium|Chromium]]
*[[/Etching of Titanium|Titanium]]
*[[/Etching of Titanium|Titanium]]
*[[/Etching of Gold|Gold]]  
*[[/Etching of Gold|Gold]]  
*[[/Etching of Platin|Platin]]
*[[/Etching of Platinum|Platinum]]
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe''
|style="background: #DCDCDC"|
*No results, use IBE
|style="background: LightGray"|
*[[/Etching of Polymer|Polymer]]
*[[/Etching of Polymer|Polymer]]
*[[/Etching of Silicon|Silicon]]  
*[[/Etching of SU-8|SU-8]]
*[[/Etching of Silicon Nitride|Silicon Nitride]]
*[[/Etching of TOPAS|TOPAS]]
*[[/Etching of Silicon Oxide|Silicon Oxide]]
|-
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)''
|}
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe etch]]


== Choose a dry etch equipment ==
== Choose Method/Equipment for the Etch ==


*[[/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
{| {{table}}
| align="left" valign="top"  style="background:LightGray"|''' A Dry Etch Equipment'''
| align="left" valign="top" style="background:#DCDCDC;"|''' A Wet Etch'''
|-valign="top"
|style="background: LightGray"|
*[[/DryEtchProcessing| Dry Etch page: General processing and hardware comparison/manuals]]
*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
*[[/DRIE-Pegasus| DRIE-Pegasus systems:]]
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]]
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Dedicated for research applications)]]
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/III-V ICP|III-V ICP]]
*[[/III-V RIE|III-V RIE - Plassys]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
 
|style="background: #DCDCDC"|
== Choose a wet etch ==
*[[/Overview of chemicals|Overview of Chemicals]]
 
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
Line 41: Line 83:
*[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch''
*[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch''
*[[/Wet Aluminium Etch|Wet Aluminium Etch]]
*[[/Wet Aluminium Etch|Wet Aluminium Etch]]
*[[/Wet Chromium Etch|Wet Chromium Etch]]
*[[/Wet Titanium Etch|Wet Titanium Etch]]
*[[/Wet Gold Etch|Wet Gold Etch]]
*[[/Wet Platinum Etch|Wet Platinum Etch]]
*[[/Wet III-V Etches|Wet III-V Etches]]
|-
|}

Latest revision as of 13:54, 6 February 2023

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Unless otherwise stated, this page is written by DTU Nanolab internal

Wet etch or dry etch

Etching at Nanolab Fabrication can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

  • An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • Easy to start up new etch solutions.

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch does not attack the backside of the sample.

Dry etch Tool Package Training

Choose material to be etched

Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required

Dielectrica Semicondutors Metals Alloys Polymers
  • No results, use IBE

Choose Method/Equipment for the Etch

A Dry Etch Equipment A Wet Etch
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