Specific Process Knowledge/Bonding/Wafer Bonder 02: Difference between revisions

Latest revision as of 07:23, 6 February 2023

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Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

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The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager

Process information

Types of Bonding

Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose	Bonding	Eutectic bonding Fusion bonding Anodic bonding
Performance	Alignment accuracy	± 2 microns for IR alignment ± 5 microns for backside alignment
Process parameter range	Process Temperature	Room temperature to 500 ${\rm {^{o}}}$ C
	Process pressure	~5 $\cdot$ 10^-4mbar - 1000mbar
	Piston Force	Depending on the area, for 4" wafers 200-6000 mbar.
Substrates	Batch size	One wafer per run Pieces
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Poly Silicon Metals: Au, Sn, Ag, Al, Ti

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Wafer_Bonder_02 click here]'''
+'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+'''All links to Labmanager requires login'''
-[[Image:EVG NIL.jpg|300x300px|thumb|EVG NIL: positioned in D-4]]
-The EVG NIL is a system for imprinting in polymers (Hot embossing), and for bonding on wafer scale. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. In principle it is also possible to align the substrate and stamp before imprint, but it is much more difficult.
-It is possible to fill bonded cavities with a desired gas. At the moment we have SF<sub>6</sub> on the system, but if you would like another one, please contact Rune Christiansen.
+[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]
+The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.
 '''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:'''
-Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=153| LabManager]
+Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=366| LabManager]
 <br clear="all" />
 ==Process information==
 ====Types of Bonding====
 *[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]]
@@ Line 19: / Line 22: @@
 *[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
+==Overview of the performance of the Wafer Bonder 02 and some process related parameters==
-====Imprint information====
-*[[Specific Process Knowledge/Imprinting|Imprinting]]
-==Overview of the performance of the EVG NIL and some process related parameters==
 {| border="2" cellspacing="0" cellpadding="10"
 |-
 !style="background:silver; color:black;" align="left"|Purpose
-|style="background:LightGrey; color:black"|Imprint and bonding
+|style="background:LightGrey; color:black"|Bonding
 |style="background:WhiteSmoke; color:black"|
 *Eutectic bonding
 *Fusion bonding
 *Anodic bonding
-*Imprinting
 |-
 !style="background:silver; color:black" align="left"|Performance
 |style="background:LightGrey; color:black"|Alignment accuracy
 |style="background:WhiteSmoke; color:black"|
-*&plusmn; 5 microns for IR alignment
+*&plusmn; 2 microns for IR alignment
-*&plusmn; 10 microns for backside alignment
+*&plusmn; 5 microns for backside alignment
 |-
 |-
@@ Line 49: / Line 47: @@
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar
+*~5<math>\cdot</math>10<sup>-4</sup>mbar - 1000mbar
 |-
 |style="background:LightGrey; color:black"|Piston Force
 |style="background:WhiteSmoke; color:black"|
-*Depending on the area, for 4" wafers 200-20000N.
+*Depending on the area, for 4" wafers 200-6000 mbar.
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*One 4" or 6" wafer per run
+*One wafer per run
-*Pieces are only allowed with speciel permission
+*Pieces
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
@@ Line 72: / Line 70: @@
 *Silicon (oxy)nitride
 *Poly Silicon
-*Photoresist
+*Metals: Au, Sn, Ag, Al, Ti
-*PMMA
-*TOPAS
-*SU-8
-*Metals: Au, Sn, Ag, Al, Ti.
 |-
 |}