Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
No edit summary
 
(7 intermediate revisions by the same user not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE/Nitride_etch_with_DUV_mask click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE/Nitride_etch_with_DUV_mask click here]'''  
<br> {{CC-bghe1}}


==Silicon nitride etch - fast - with resist mask==
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch  in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5">


==Silicon nitride etch with STS recommended silicon nitride recipe==
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon" widths="300px" heights="250px" perrow="5">
 
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 let and etched down into the Si
Image:duv_sin_04_06.jpg|30sec etch
Image:duv_sin_04_06.jpg|30sec etch
Image:duv_sin_04_p1my_13.jpg|30 sec etch - 1µm pitch
Image:duv_sin_04_p1my_13.jpg|30 sec etch - 1µm pitch
Line 12: Line 12:


</gallery>
</gallery>


==Silicon nitride etch with the standard silicon oxide etch==
==Silicon nitride etch with the standard silicon oxide etch==


<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by BGHE February 2015 " widths="300px" heights="250px" perrow="3">
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015 " widths="300px" heights="250px" perrow="3">
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch
image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch
image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch
image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch
</gallery>
</gallery>

Latest revision as of 12:01, 3 February 2023

Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Silicon nitride etch - fast - with resist mask

  • Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab

  • 2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si

  • 30sec etch

  • 30 sec etch - 1µm pitch

  • 30 sec etch - 3µm pitch

  • 30 sec etch - 3 µm pitch

Silicon nitride etch with the standard silicon oxide etch

  • Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015

  • Profile of lines with 1µm pitch

  • Profile of lines with 4µm pitch

  • Profile of 2µm line - zoom in on 4µm pitch

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE/Nitride_etch_with_DUV_mask&oldid=44198"