Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions

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<gallery caption="Some chemicals of the MVD and the surface reaction" widths="200px" heights="150px" perrow="2">
==Silicon nitride etch - fast - with resist mask==
image:chlorosilanes.jpg|Different chemicals for the MVD.
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch  in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5">
image:MVDsurfacereaction.jpg|The chemical reaction in which the Cl atoms of the precursors are eliminated under formation of HCl.
 
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
Image:duv_sin_04_06.jpg|30sec etch
Image:duv_sin_04_p1my_13.jpg|30 sec etch - 1µm pitch
Image:duv_sin_04_p3my_07.jpg|30 sec etch - 3µm pitch
Image:duv_sin_04_p3my_10.jpg|30 sec etch - 3 µm pitch
 
</gallery>
 
==Silicon nitride etch with the standard silicon oxide etch==
 
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015 " widths="300px" heights="250px" perrow="3">
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch
image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch
</gallery>
</gallery>

Latest revision as of 12:01, 3 February 2023

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Silicon nitride etch - fast - with resist mask

Silicon nitride etch with the standard silicon oxide etch