Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions

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== Overview of the standard processes: Processes  A, B, C, D and SOI ==
== Overview of the standard processes: Processes  A, B, C, D and SOI ==
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The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
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| Photo resist
| Photo resist
| 12-13 % on 6" wafer
| 12-13 % on 6" wafer
|
|
|-
! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C]]
| Continuous
| Very slow etch
| 50 nm posts
| Aluminum
| 99.9 % on 4" wafer
|
|
|-
! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D]]
| Bosch
| Smooth sidewall etch
| 10 µm trench
| Photo resist
| 50 % on 6" wafer
|  
|  
|  
|  
|-
|-
|}
|}

Latest revision as of 15:39, 2 February 2023

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Overview of the standard processes: Processes A, B, C, D and SOI

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process

Standard processes on the DRIE-Pegasus
Process name Type Purpose Conditions during original runs Best usage
Feature Mask material Etch load Comments
Process A Bosch Fast etch 80 µm trench Photo resist 12-13 % on 6" wafer
Process B Bosch Fast etch 30 µm diameter via Photo resist 12-13 % on 6" wafer
Process C Continuous Very slow etch 50 nm posts Aluminum 99.9 % on 4" wafer
Process D Bosch Smooth sidewall etch 10 µm trench Photo resist 50 % on 6" wafer
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