Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions
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=== Aluminium etch === | === Aluminium etch === | ||
{{Template:Author-jmli1}} | |||
<!--Checked for updates on 2/02-2023 - ok/jmli --> | |||
The aluminium etch has two steps: | The aluminium etch has two steps: | ||
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|- | |- | ||
! Pressure (mTorr) | ! Pressure (mTorr) | ||
| 2, Strike 3 | | 2, Strike 3 sec@5 mTorr | ||
| 1 | | 1 | ||
|- | |- | ||
| Line 57: | Line 63: | ||
| | | | ||
|~350 nm/min (depending on features size and etch load) | |~350 nm/min (depending on features size and etch load) | ||
|} | |||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | |||
|+ '''Al etch''' ''made by Chantal Silvetre@nanolab October 2014'' | |||
|- | |||
! rowspan="2" | Parameter | |||
! colspan="2" | Process step | |||
|- | |||
! width="200" | Breakthrough | |||
! width="200" | Main | |||
|- | |||
! Time (secs) | |||
| 20 | |||
| 40 (variable) | |||
|- | |||
! HBr (sccm) | |||
| - | |||
| 15 | |||
|- | |||
! Cl<sub>2</sub> (sccm) | |||
| 20 | |||
| 25 | |||
|- | |||
! Pressure (mTorr) | |||
| 2, Strike 3 secs @ 6 mTorr | |||
| 1 | |||
|- | |||
! Coil power (W) | |||
| 600 | |||
| 500 | |||
|- | |||
! Platen power (W) | |||
| 125 | |||
| 100 | |||
|- | |||
! Temperature (<sup>o</sup>C) | |||
| 20 | |||
| 20 | |||
|- | |||
! Spacers (mm) | |||
| 100 | |||
| 100 | |||
|- | |||
!Results | |||
| | |||
| | |||
|- | |||
!Etch rate | |||
| | |||
|~282 nm/min (depending on features size and etch load) | |||
|} | |} | ||
Latest revision as of 15:11, 2 February 2023
Feedback to this page: click here
Aluminium etch
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
The aluminium etch has two steps:
- Breakthrough
- The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
- Main
- The main step etches bulk aluminium.
| Parameter | Process step | |
|---|---|---|
| Breakthrough | Main | |
| Time (secs) | 20 | 40 (variable) |
| HBr (sccm) | - | 15 |
| Cl2 (sccm) | 20 | 25 |
| Pressure (mTorr) | 2, Strike 3 sec@5 mTorr | 1 |
| Coil power (W) | 600 | 500 |
| Platen power (W) | 125 | 100 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 30 | 30 |
| Results | ||
| Etch rate | ~350 nm/min (depending on features size and etch load) | |
| Parameter | Process step | |
|---|---|---|
| Breakthrough | Main | |
| Time (secs) | 20 | 40 (variable) |
| HBr (sccm) | - | 15 |
| Cl2 (sccm) | 20 | 25 |
| Pressure (mTorr) | 2, Strike 3 secs @ 6 mTorr | 1 |
| Coil power (W) | 600 | 500 |
| Platen power (W) | 125 | 100 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 100 | 100 |
| Results | ||
| Etch rate | ~282 nm/min (depending on features size and etch load) | |