Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions

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<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Page reviewed by jmli 9/8-2022  -->


=== Aluminium etch ===
=== Aluminium etch ===
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->


The aluminium etch has two steps:
The aluminium etch has two steps:
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Al etch''' ''made by Chantal Silvetre@danchip October 2014''
|+ '''Al etch''' ''made by Chantal Silvetre@nanolab October 2014''
|-
|-
! rowspan="2" | Parameter
! rowspan="2" | Parameter
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|~282 nm/min (depending on features size and etch load)  
|~282 nm/min (depending on features size and etch load)  
|}
|}
===Al etch information supplied from STS===
[[Media:Al-etch.pdf|Al Etch Information (supplied from STS)]].

Latest revision as of 15:11, 2 February 2023

Feedback to this page: click here

Aluminium etch

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

The aluminium etch has two steps:

Breakthrough
The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
Main
The main step etches bulk aluminium.
Al etch
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 sec@5 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 30 30
Results
Etch rate ~350 nm/min (depending on features size and etch load)


Al etch made by Chantal Silvetre@nanolab October 2014
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 secs @ 6 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 100 100
Results
Etch rate ~282 nm/min (depending on features size and etch load)
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