Specific Process Knowledge/Thin film deposition/Deposition of Ruthenium: Difference between revisions

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New page comparing Temescal and Lesker for Ruthenium dep. Before it was only Lesker
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Ruthenium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
== Deposition of Ru ==
== Deposition of Ru ==
Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipments:
Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment:




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  |-style="background:WhiteSmoke; color:black"
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! Comment
! Comment
|Please contact the thin film group before you deposit Ru, even if Ru is present in the machine.  
|Please contact the thin film group before depositing Ru, even if Ru is in the machine.  
The current target material belongs to a specific customer.
The current target material belongs to a specific customer.
|
|
|}
|}


'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''


'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''

Latest revision as of 17:06, 1 February 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Ru

Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Ru

(line-of-sight deposition)

Sputter deposition of Ru

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm**
Deposition rate 0.5Å/s to 10Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment Please contact the thin film group before depositing Ru, even if Ru is in the machine.

The current target material belongs to a specific customer.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

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