Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Images of m resist etches: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_AOE/Standard_recipe_with_resist_mask/Images_of_m_resist_etches click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_AOE/Standard_recipe_with_resist_mask/Images_of_m_resist_etches click here]''' | ||
=Here are presented some images of etches using the recipe SiO2_res= | =Here are presented some images of etches using the recipe SiO2_res= | ||
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==Profile of 1-10µm deep etch + resist profile == | ==Profile of 1-10µm deep etch + resist profile == | ||
''by Berit | ''by Berit Herstrøm (BGHE) from nanolab'' | ||
* Old AZ5214E resist (negative - I think), etched for 10 min with SiO2_res at 0 dg. with spacers 30 mm | |||
<gallery caption="January 2018, SiO2_res@0degrees, etch time: 4 min" widths="200px" heights="150px" perrow="3"> | [[File:QC10min20221208_03.jpg|400px|left|thumb|December 2022, BGHE]] | ||
<br clear="all"> | |||
<gallery caption="January 2018 by BGHE, SiO2_res@0degrees, etch time: 4 min, 0mm spacers" widths="200px" heights="150px" perrow="3"> | |||
Image:20180129SiO2_std_05.jpg | Image:20180129SiO2_std_05.jpg | ||
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Etch time: 30 min<br> | Etch time: 30 min<br> | ||
Mask: AZ resist 4 µm thick negative process<br> | Mask: AZ resist 4 µm thick negative process<br> | ||
Viewed in profile - charging is seen in the top]] | Viewed in profile - charging is seen in the top, by BGHE]] | ||
![[image:AOE_act_neg_resist_profile.jpg|300x300px|thumb|left| | ![[image:AOE_act_neg_resist_profile.jpg|300x300px|thumb|left| | ||
Process date: September 2010<br> | Process date: September 2010<br> | ||
This is showing the resist profile before AOE etch | This is showing the resist profile before AOE etch | ||
Mask: AZ resist 4 µm thick negative process ]] | Mask: AZ resist 4 µm thick negative process, by BGHE ]] | ||
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==Resist mask baked at 150dg effected by m_res_ny== | ==Resist mask baked at 150dg effected by m_res_ny== | ||
''by bghe@ | ''by bghe@nanolab'' | ||
{| border="2" cellspacing="1" cellpadding="3" align="middle" | {| border="2" cellspacing="1" cellpadding="3" align="middle" | ||
![[image:AOE resist after oxide etch pre150dg.jpg|300x300px|thumb|left| | ![[image:AOE resist after oxide etch pre150dg.jpg|300x300px|thumb|left| |
Latest revision as of 16:39, 31 January 2023
Feedback to this page: click here
Here are presented some images of etches using the recipe SiO2_res
Profile of 1-10µm deep etch + resist profile
by Berit Herstrøm (BGHE) from nanolab
- Old AZ5214E resist (negative - I think), etched for 10 min with SiO2_res at 0 dg. with spacers 30 mm
- January 2018 by BGHE, SiO2_res@0degrees, etch time: 4 min, 0mm spacers
Resist mask effected by m_res_ny
by bghe@nanolab
Resist mask baked at 150dg effected by m_res_ny
by bghe@nanolab
Etching of 1.0 µm SiO2 by 15 min m_res_ny: Artefacts from Lithography
by Frederik Stöhr @danchip
General Description
- Process date: Jan 2015
- Recipe: m_res_ny@0degrees
- Process time: 15 min
- Substrate: 525 µm Si + 1 µm thermal silicon oxide + ~50 nm BARC (anti reflection coating, which promotes adhesion)
- Mask: [XOP12] AZ5214E positive resist 1.5 µm thick (6-inch aligner 3 sec exposure, 60 sec developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: O2 Plasma Ashing 10 min
Etching of 1.1 µm SiO2 by 10 min m_res_ny: Corrugated sidewall
by Frederik Stöhr @danchip
General Description
- Process date: Feb 2014
- Recipe: m_res_ny@0degrees
- Process time: 5:30 min
- Substrate: 525 µm Si + 1.1 µm thermal silicon oxide + HMDS (adhesion promoter)
- Mask: [XOP3] AZ positive resist 1.5 µm thick (6-inch aligner 3 sec exposure, 60 sec developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: O2 Plasma Ashing 10 min
Etching of 2.1 µm SiO2 by 10 min m_res_ny: PR mask shape
by Frederik Stöhr @danchip
General Description
- Process date: Feb 2013
- Recipe: m_res_ny@0degrees
- Process time: 10 min
- Mask: [XOP2] AZ5214E positive resist 2.2 µm thick (6-inch aligner 4 sec exposure, 70 sec developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: None
Etching of 2.1 µm SiO2 by 12 min m_res_ny: Etch residues
by Frederik Stöhr @danchip
General Description
- Process date: April 2014
- Recipe: m_res_ny@0degrees
- Process time: 12 min
- Substrate: [XOP5] 525 µm Si + 2 µm thermal silicon oxide + HMDS (adhesion promoter)
- Mask: AZ5214E positive resist 2.2 µm thick (6-inch aligner 4 sec exposure, 70 sec developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: O2 Plasma Ashing 10 min
Etching of 2.8 µm SiO2 by m_res_ny with AZ5214E mask
by Frederik Stöhr @danchip
General Description
- Process date: May 2014
- Recipe: m_res_ny@0degrees
- Process time: 16 VS 20 min
- Substrate: 525 µm Si + 2.8 µm thermal silicon oxide + HMDS (adhesion promoter)
- Mask: AZ5214E positive resist 2.2 µm thick (6-inch aligner 4 sec exposure, 70 sec developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: O2 Plasma Ashing 10 min
Etching of 2.8 µm SiO2 by m_res_ny with AZ MiR 701 mask
by Frederik Stöhr @danchip
General Description
- Process date: May 2014
- Recipe: m_res_ny@0degrees
- Process time: 15:30 min
- Substrate: 525 µm Si + 2.8 µm thermal silicon oxide + HMDS (adhesion promoter)
- Mask: [XOP6] MiR 701 positive resist 2.0 µm thick (KS aligner 29 sec exposure, TMAH Manual MiR701 60s)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: O2 Plasma Ashing 10 min
Etching of 2.2 µm SiO2 by SIO2_RES 10 min VS 15 min
by Frederik Stöhr @danchip
General Description
- Process date: Jan 2015
- Recipe: SIO2_RES@0degrees
- Process time: 10 min VS 15 min
- Substrate: 525 µm Si + 2.2 µm thermal silicon oxide + HMDS (adhesion promoter)
- Mask: [XOP8] AZ5214E positive resist 2.2 µm thick (6-inch aligner 4sec exposure, 60s developer)
- Etch Load (Total Exposed SiO2): ~ 10 %
- Post process: None