Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE: Difference between revisions
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(New page: For a general introduction to RIE at Danchip see RIE (Reactive Ion Etch) Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silic...) |
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For a general introduction to RIE at Danchip see [[RIE (Reactive Ion Etch)]] | For a general introduction to RIE at Danchip see [[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ||
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know | Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know | ||
Revision as of 09:38, 30 October 2007
For a general introduction to RIE at Danchip see RIE (Reactive Ion Etch)
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know