Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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!Parameter | !Parameter | ||
|Recipe name: '''Slow Etch''' | |Recipe name: '''Slow Etch''' | ||
|Recipe name: '''Slow Etch2''' | |||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
|350 | |350 | ||
|200 | |||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
|25 | |25 | ||
|50 | |||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
|20 | |||
|20 | |20 | ||
|- | |- | ||
|H2 flow [sccm] | |H2 flow [sccm] | ||
|15 | |||
|15 | |15 | ||
|- | |- | ||
|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
|30 | |||
|30 | |30 | ||
| Line 29: | Line 35: | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|3 | |3 | ||
|10 | |||
|- | |- | ||
| Line 40: | Line 47: | ||
|Etch of SRN | |Etch of SRN | ||
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
|''' | |||
|- | |- | ||
| Line 48: | Line 56: | ||
|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
| | |||
|- | |- | ||
|Etch rate of DUV resist] | |Etch rate of DUV resist] | ||
|'''~nm/min | |'''~nm/min | ||
| | |||
| Line 57: | Line 67: | ||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
| | |||
| | | | ||
|- | |- | ||
Revision as of 09:50, 27 January 2023
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch | Recipe name: Slow Etch2 |
|---|---|---|
| Coil Power [W] | 350 | 200 |
| Platen Power [W] | 25 | 50 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 15 | 15 |
| CF4 flow [sccm] | 30 | 30 |
| Pressure [mTorr] | 3 | 10 |
| Typical results | Test Results | |
|---|---|---|
| Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] | |
| Etch rate of Si3N4 | ~49nm/min [4" on carrier] | |
| Etch rate of SiO2 | ~42nm/min [41-43 nm/min over a 6" wafer] | |
| Etch rate of DUV resist] | ~nm/min |
|
| Profile [o] |
- Map of etch rate measurements
Etch rate map of SiO2 etch on 6" wafer
Etch rate map of SRN etch on 6" wafer
