Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/Evaporation of W in Temescal: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,759 edits
No edit summary
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,759 edits
Line 2: Line 2:


=Deposition of W in Temescal=
=Deposition of W in Temescal=
This page describes deposition of W in Temescal.


During the e-beam deposition of Tungsten, extremely bright light and heat are generated! Lower density film than expected due to porosity. Consider using sputtering instead.
During the e-beam deposition of Tungsten, extremely bright light and heat are generated! Lower density film than expected due to porosity. Consider using sputtering instead.

Revision as of 16:13, 2 January 2023

Feedback to this page: click here

Deposition of W in Temescal

This page describes deposition of W in Temescal.

During the e-beam deposition of Tungsten, extremely bright light and heat are generated! Lower density film than expected due to porosity. Consider using sputtering instead.

Power 33W, stable rate, tooling 86%. Measured thickness 20 nm (XRR).

Wait for base pressure 3 10-7Torr before start.


Deposition of Tungsten. Dep. rate: 0.5Å/s, Thickness sp.: 20nm
Tooling factor 86% 2022-02-25
Layer name Thickness (nm) Density (g/cm3) Rougness (nm) Delta Beta
Moisture 0.80 0.52 0.52 1.7906e-6 4.1579e-8
WOx

1.01

 5.00 0.72 1.6991e-5 3.9456e-7
W

19.12

 15.66 0.81 3.7045e-5 2.9324e-6
SiO2 (native oxide) 2.09 2.15 0.32 7.0136e-6 1.6287e-7
Si (wafer) 2.33 0.00 7.5860e-6 1.7616e-7


  • XRR analysis of e-beam deposited Ta thin film.
  • X-ray reflectivity. Measurement and Fit. Tooling 86%. Seems that this deposition suffered from a high oxidation level. (low fitted density of the main Ta layer) or poures formation
    X-ray reflectivity. Measurement and Fit. Tooling 86%. Seems that this deposition suffered from a high oxidation level. (low fitted density of the main Ta layer) or poures formation
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten/Evaporation_of_W_in_Temescal&oldid=42238"