Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide: Difference between revisions
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== Deposition of | == Deposition of Silicon Carbide == | ||
Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]: | |||
*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]] | *[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]] | ||
Latest revision as of 20:48, 20 December 2022
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Deposition of Silicon Carbide
Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):