Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide: Difference between revisions
Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Silicon Carbide click here]''' <br clear="all" /> == Deposition of Sicicon Carbide == Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): */Deposition of SiC in Sputter-System Les..." |
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== Deposition of | == Deposition of Silicon Carbide == | ||
Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): | Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): | ||
*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]] | *[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]] | ||
Revision as of 18:56, 16 December 2022
Feedback to this page: film deposition/Deposition of Silicon Carbide click here
Deposition of Silicon Carbide
Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):