Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
< Specific Process Knowledge | Etch | DRIE-Pegasus | Pegasus-4
Jump to navigation
Jump to search
| Line 38: | Line 38: | ||
|- | |- | ||
|Etch of | |Etch of SRN | ||
| | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
|- | |- | ||
|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
|'''~ | |'''~49nm/min [4" on carrier] | ||
|- | |- | ||
|Etch rate of Silicon | |Etch rate of Silicon | ||
|'''~nm/min | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
|- | |- | ||
Revision as of 16:10, 6 December 2022
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch |
|---|---|
| Coil Power [W] | 350 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| He flow [sccm] | 0 |
| CF4 flow [sccm] | 45 |
| Pressure [mTorr] | 3 |
| Typical results | Test Results |
|---|---|
| Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] |
| Etch rate of Si3N4 | ~49nm/min [4" on carrier] |
| Etch rate of Silicon | ~42nm/min [41-43 nm/min over a 6" wafer] |
| Etch rate of DUV resist] | ~nm/min
|
| Profile [o] |