Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

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(Created page with "=The slow etch= The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape")
 
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=The slow etch=  
=The slow etch=  
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''Slow Etch'''
 
|-
|Coil Power [W]
|350
|-
|Platen Power [W]
|50
|-
|Platen temperature [<sup>o</sup>C]
|20
|-
|He flow [sccm]
|0
|-
|CF<sub>4</sub> flow [sccm]
|40
|-
|Pressure [mTorr]
|4
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results
|-
|Etch of Si3N4 with DUV mask
|
|-
|Etch rate of Si3N4
|'''~nm/min
|-
|Etch rate of Silicon
|'''~nm/min
|-
|Etch rate of DUV resist]
|'''~nm/min
|-
|Profile [<sup>o</sup>]
|
|-
|}
<br clear="all" />

Revision as of 15:49, 6 December 2022

The slow etch

The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape

Parameter Recipe name: Slow Etch
Coil Power [W] 350
Platen Power [W] 50
Platen temperature [oC] 20
He flow [sccm] 0
CF4 flow [sccm] 40
Pressure [mTorr] 4
Typical results Test Results
Etch of Si3N4 with DUV mask
Etch rate of Si3N4 ~nm/min
Etch rate of Silicon ~nm/min
Etch rate of DUV resist] ~nm/min


Profile [o]


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