Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec

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Deposition rate

Depending on the settings (pressure and power) during the sputtering process, the uniformity and grain size of the deposited layer will be different (see study on Uniformity of sputtered chromium)

The deposition rate will also change with the settings.

The following data is from the Wordentec

Pressure $1*10^{-3}$ mbar, power 150 W

The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge).

This corresponds to a deposition time of 1 minute 34 seconds for deposition of 10 nm.

Pressure $4*10^{-3}$ mbar, power 300 W

The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge).

This corresponds to a deposition time of 44 seconds for deposition of 10 nm.