Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE: Difference between revisions
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=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching have been decommissioned </span> = | =<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching have been decommissioned </span> = | ||
* <span style="color:#FF0000"> This information is save because it might be valuable as inspiration for other dry etch systems. | |||
For a general introduction to RIE at DTU Nanolab see [[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | For a general introduction to RIE at DTU Nanolab see [[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ||
Revision as of 13:04, 6 September 2022
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Both RIE's (RIE1 and RIE2) for silicon based etching have been decommissioned
- This information is save because it might be valuable as inspiration for other dry etch systems.
For a general introduction to RIE at DTU Nanolab see RIE (Reactive Ion Etch)
Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know
Some RIE recipes for etching of silicon nitride:
Name | SF6 flow | O2 flow | CHF3 flow | N2 flow | Pressure | Power |
---|---|---|---|---|---|---|
OH_PolyA | 32 sccm | 8 sccm | . | . | 80 mTorr | 30 W |
BGE-NITR | . | . | 8 sccm | 43 sccm | 38 mTorr | 50 W |
Expected result using the above RIE recipes for etching of silicon nitride:
You should be aware that the result can deviate quit a lot from what is written here depending on ex. the mask loading.
Name | Tested with mask load: | Etch rate | Anisotropy | Selectivity to nitride:resist | Selectivity to nitride:oxide | Selectivity to nitride:silicon | Comments |
---|---|---|---|---|---|---|---|
OH_PolyA | 10-20% | 0.05 µm/min (tested before 2014) | ? | ~1:1 | ~2-3:1 | ~1:13 | . |
BGE-NITR | 10-20% | 0.04 µm/min (tested before 2014) | Expected to be very anisotropic - not verified | ? | ~1:1 | ~1:1 | Especially good to remove nitride on one side of the wafer avoiding getting anything etched on the back side. |