Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 3kW 100% a: Difference between revisions

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| align="center" style="background:#f0f0f0;"|'''SEM image:'''
| align="center" style="background:#f0f0f0;"|'''SEM image:'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a000.png a000]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a000.png a000]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a001.png a001]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a001.png a001]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a002.png a002]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a002.png a002]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a003.png a003]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a003.png a003]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a004.png a004]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a004.png a004]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a005.png a005]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a005.png a005]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a006.png a006]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a006.png a006]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a007.png a007]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a007.png a007]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a008.png a008]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a008.png a008]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018652a009.png a009]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018652a009.png a009]'''
|-  
|-  
| Trench width (um)||400.14||400.65||249.77||161.15||81.37||41.79||20.28||9.84||4.27||2.71
| Trench width (um)||400.14||400.65||249.77||161.15||81.37||41.79||20.28||9.84||4.27||2.71

Latest revision as of 10:28, 9 August 2022



Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
29/11-2019 Medusa One Si / 10% stab-19 chamber clean 20 nanolab/ jmli /DREM 3.0 kW 100% a S018652 Process log entry

SEM image: a000 a001 a002 a003 a004 a005 a006 a007 a008 a009
Trench width (um) 400.14 400.65 249.77 161.15 81.37 41.79 20.28 9.84 4.27 2.71
Etched depth (um) 140.42 140.43 141.5 141.57 135.57 124.71 108.95 91.98 70.41 60.74
Etch rate (um/min) 14.04 14.04 14.15 14.16 13.56 12.47 10.89 9.2 7.04 6.07
Etch rate (nm/cyc) 1.17 1.17 1.18 1.18 1.13 1.04 0.91 0.77 0.59 0.51
Sidewall bowing (%) -0.36 -0.8 -0.45 -0.31 -0.14 -0.04 0.28 0.64 0.44 0.76
Sidewall angle (degs) 93.28 93.18 93.1 92.33 91.82 91.58 91.53 91.37 91.12 90.66
Bottom bowing (%) 3.39 3.99 5.43 8.68 13.13 16.86 18.26 13.09 16.07 18.41
Aspect ratio 0.34 0.34 0.55 0.85 1.58 2.76 4.7 7.64 12.46 17.77
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