Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/nBoost04: Difference between revisions
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<!--Checked for updates on 30/7-2018 - ok/jmli --> | |||
<!--Page reviewed by jmli 9/8-2022 --> | |||
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| Pegasus/jmli | | Pegasus/jmli | ||
| 3 minute TDESC clean + 30 sec barc etch | | 3 minute TDESC clean + 30 sec barc etch | ||
| | | nanolab/jml/nano/nanoboost/nboost04 100 cycles or 13 minutes | ||
| S004436 | | S004436 | ||
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Latest revision as of 10:10, 9 August 2022
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 24/10-2014 | 4" DUV-BoxC wafer | stepper mask (50 nm barc + 250 nm krf)/Si | Si / 60+ % on die | Pegasus/jmli | 3 minute TDESC clean + 30 sec barc etch | nanolab/jml/nano/nanoboost/nboost04 100 cycles or 13 minutes | S004436 |
| |
HiRes images of S004436
