Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions
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Revision as of 15:03, 4 August 2022
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Al2O3 etching with the ICP metal
| Parameter | Recipe name: no name (testing recipe) |
|---|---|
| Coil Power [W] | 1200 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 0 |
| BCl3 flow [sccm] | 60 |
| Cl2 flow [sccm] | 30 |
| Pressure [mTorr] | 4 |
| Material to be etched | Etch rate using the above parameters |
|---|---|
| Al2O3 |
|
Al2O3 etching by sanvis@nanolab
Al2O3 etching by bghe@nanolab
Recipes
| Parameter | Recipe 1:Al2O3 etch platen only |
|---|---|
| BCl3 (sccm) | 15 |
| Ar (sccm) | 15 |
| Pressure (mTorr) | 5 |
| Coil power (W) | 0 |
| Platen power (W) | 30 |
| Temperature (oC) | 20 |
| Spacers (mm) | 100 mm |
Results
- Profile view
- Top view after resist strip
