Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions
Jump to navigation
Jump to search
| Line 82: | Line 82: | ||
===Results=== | ===Results=== | ||
<gallery> | |||
Image:S038116_01.jpg | |||
Image:S038116_12.jpg | |||
Image:S038116_14.jpg | |||
Image:S038116_16.jpg | |||
Image:S038116_17.jpg | |||
Image:S038116_18.jpg | |||
</gallery> | |||
Revision as of 15:00, 4 August 2022
Feedback to this page: click here
Al2O3 etching with the ICP metal
| Parameter | Recipe name: no name (testing recipe) |
|---|---|
| Coil Power [W] | 1200 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 0 |
| BCl3 flow [sccm] | 60 |
| Cl2 flow [sccm] | 30 |
| Pressure [mTorr] | 4 |
| Material to be etched | Etch rate using the above parameters |
|---|---|
| Al2O3 |
|
Al2O3 etching by sanvis@nanolab
Al2O3 etching by bghe@nanolab
Recipes
| Parameter | Recipe 1:Al2O3 etch platen only |
|---|---|
| BCl3 (sccm) | 15 |
| Ar (sccm) | 15 |
| Pressure (mTorr) | 5 |
| Coil power (W) | 0 |
| Platen power (W) | 30 |
| Temperature (oC) | 20 |
| Spacers (mm) | 100 mm |
