Specific Process Knowledge/Etch/III-V ICP/GaAsnano: Difference between revisions
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=== GaAs nano etch === | === GaAs nano etch === | ||
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|colspan="2" align="center"| '''Results (GaAs Nano Etch)''' | |colspan="2" align="center"| '''Results (GaAs Nano Etch)''' ''from 2011 by Thor Ansbæk @photonic'' | ||
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|GaAs | |GaAs | ||
Latest revision as of 14:42, 18 August 2021
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GaAs nano etch
| Recipe | GaAs Nano Etch |
| Cl2 flow | 4 sccm |
| Ar flow | 12 sccm |
| Platen power | 80 W |
| Coil power | 700 W |
| Pressure | 6 mTorr |
| Platen chiller temperature | 20 oC |
| Results (GaAs Nano Etch) from 2011 by Thor Ansbæk @photonic | |
| GaAs | 5 nm/s |
| AlInP | 1 nm/s |
| HSQ | 1.5 nm/s |
| ZEP520a | 2 nm/s |
| Si3N4 | 2 nm/s |
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