Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_with_ICP_Metal click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_with_ICP_Metal click here]'''




Revision as of 15:12, 18 August 2021

Feedback to this page: click here


Al2O3 etching with the ICP metal

Parameter Recipe name: no name (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_with_ICP_Metal&oldid=39008"