Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions

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==Silicon nitride etch with STS recommended silicon nitride recipe==
==Silicon nitride etch with STS recommended silicon nitride recipe==
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch  in 1min15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5">
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch  in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5">


Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si

Revision as of 15:01, 18 August 2021

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Silicon nitride etch with STS recommended silicon nitride recipe

  • Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab

  • 2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si

  • 30sec etch

  • 30 sec etch - 1µm pitch

  • 30 sec etch - 3µm pitch

  • 30 sec etch - 3 µm pitch

Silicon nitride etch with the standard silicon oxide etch

  • Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015

  • Profile of lines with 1µm pitch

  • Profile of lines with 4µm pitch

  • Profile of 2µm line - zoom in on 4µm pitch

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