Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/SiO2 etch with DUV mask: Difference between revisions

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image:DUV_ox_02_5min 16.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, vertical sidewalls, 4µm pitch
image:DUV_ox_02_5min 16.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, vertical sidewalls, 4µm pitch


image:DUV_ox_02_top_04.jpg|Bird view of 1µm pitch SiO2 lines, some roughness is seem  
image:DUV_ox_02_top_04.jpg|Bird view of 1µm pitch SiO2 lines, some roughness is seem.
image:DUV_ox_01_10min29.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, all resist is gone and it has been etched a little down in the Si.
image:DUV_ox_01_10min29.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, all resist is gone and it has been etched a little down in the Si.
image:DUV_ox_01_10min32.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, all resist is gone and it has been etched a little down in the Si.
image:DUV_ox_01_10min32.jpg|Profile of SiO2 lines etched for 5min with SiO2_res in the AOE, all resist is gone and it has been etched a little down in the Si.

Revision as of 14:51, 18 August 2021

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