Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2

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General Information

The AlN process should never run above 350 °C due to the decomposition of the trimethylaluminium. As already mentioned in the general ALD2 (PEALD) page oxides and nitrides cannot be deposited at the same time. Since the aluminium nitride requires the plasma source we only run all nitride processes without the thermal lid. Hence the chamber volume is bigger than with the thermal lid which causes that the substrate temperature is around 50 °C lower than the setpoint.

Result from acceptance test

• results from the acceptance test (old material) .