LabAdviser/Technology Research/Smoothed advanced silicon NEMS devices: Difference between revisions
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= | =Technology Development of Silicon Plasma Etching Process at Nanoscale= | ||
*'''Project type:''' Ph.d. project | *'''Project type:''' Ph.d. project | ||
*'''Project responsible:''' Vy Thi Hoang Nguyen | *'''Project responsible:''' Vy Thi Hoang Nguyen | ||
*'''Supervisors:'''Henri Jansen, Flemming Jensen, Jörg Hübner | *'''Supervisors:'''Henri Jansen, Flemming Jensen, Jörg Hübner | ||
*'''Partners involved:''' DTU Danchip | *'''Partners involved:''' DTU Danchip | ||
*'''Project start:''' November 2017 | |||
==Project Description== | ==Project Description== | ||
Plasma processes are important for silicon-based micro electromechanical systems (MEMS) with critical dimensions around a few microns. Although widely utilized and largely understood, silicon plasma etching fails to reproduce at the nanoscale. Transport effects ‘down the etched cavity’ limit rate and selectivity while high aspect ratios, profile and passivation control are more challenging. The so-called Bosch etch process is probably the most popular technique in MEMS production facilities today. However, the high roughness with finite sidewall scallop size and hard to remove fluorocarbon (FC) residue on the sidewalls of etched structures make the process less favorable for nanoscale engineering. | |||
In this project, the usability of SF6 and O2 plasma will be studied as a replacement for Bosch process to avoid FC residue and facilitate the nanoscale silicon etching with profile control and sufficient mask selectivity preferably at room temperature. The focus will be on the development of a fundamental understanding of the special challenges in SF6-O2 plasma etching at the nanoscale including the physics and chemistry involved. The aim is to establish a generic knowledge platform for future applications such as injection molding. | |||
For this, modern lithography tools (MLA, DUV stepper, e-beam) will be utilized to define the structure down to 10nm critical dimension on top of a silicon wafer. Subsequently, the pattern will be transferred into the silicon layer using a modern plasma tool (SPTS, DRIE-Pegasus). During the process, various etching parameters (flow, pressure, power, etc.) are varied to discover performance-affecting factors. Finally, etching results are characterized under scanning electron microscopy (Carl Zeiss AG, SEM Supra 60VP). | |||
==Publications== | |||
===Name of publication 1 made in this project=== | |||
Reference and link to the publication | |||
*[[/Process flow form|Process flow(s) relevant to this publication including links to Process development made in connection to this publication this is describes in either LabAdviser or Process2Share]] | |||
===Name of publication2 made in this project=== | |||
Reference and link to the publication | |||
*[[/Process flow form|Process flow(s) relevant to this publication including links to Process development made in connection to this publication this is describes in either LabAdviser or Process2Share]] | |||
===Name of publication3 made in this project=== | |||
Reference and link to the publication | |||
*[[/Process flow form|Process flow(s) relevant to this publication including links to Process development made in connection to this publication this is describes in either LabAdviser or Process2Share]] | |||
Latest revision as of 13:51, 9 May 2020
Technology Development of Silicon Plasma Etching Process at Nanoscale
- Project type: Ph.d. project
- Project responsible: Vy Thi Hoang Nguyen
- Supervisors:Henri Jansen, Flemming Jensen, Jörg Hübner
- Partners involved: DTU Danchip
- Project start: November 2017
Project Description
Plasma processes are important for silicon-based micro electromechanical systems (MEMS) with critical dimensions around a few microns. Although widely utilized and largely understood, silicon plasma etching fails to reproduce at the nanoscale. Transport effects ‘down the etched cavity’ limit rate and selectivity while high aspect ratios, profile and passivation control are more challenging. The so-called Bosch etch process is probably the most popular technique in MEMS production facilities today. However, the high roughness with finite sidewall scallop size and hard to remove fluorocarbon (FC) residue on the sidewalls of etched structures make the process less favorable for nanoscale engineering. In this project, the usability of SF6 and O2 plasma will be studied as a replacement for Bosch process to avoid FC residue and facilitate the nanoscale silicon etching with profile control and sufficient mask selectivity preferably at room temperature. The focus will be on the development of a fundamental understanding of the special challenges in SF6-O2 plasma etching at the nanoscale including the physics and chemistry involved. The aim is to establish a generic knowledge platform for future applications such as injection molding. For this, modern lithography tools (MLA, DUV stepper, e-beam) will be utilized to define the structure down to 10nm critical dimension on top of a silicon wafer. Subsequently, the pattern will be transferred into the silicon layer using a modern plasma tool (SPTS, DRIE-Pegasus). During the process, various etching parameters (flow, pressure, power, etc.) are varied to discover performance-affecting factors. Finally, etching results are characterized under scanning electron microscopy (Carl Zeiss AG, SEM Supra 60VP).
Publications
Name of publication 1 made in this project
Reference and link to the publication
Name of publication2 made in this project
Reference and link to the publication
Name of publication3 made in this project
Reference and link to the publication