Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride

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Deposition of Titanium Nitride

Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering methods. If sputtering method is used the target is Ti and nitrogen (N₂) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:

• TiN deposition using ALD.

• TiN deposition using reactive sputtering.

Comparison between sputtering and ALD methods for deposition of Titanium Nitride.

	ALD2	Sputter System Lesker
Generel description	Atomic Layer Deposition	Sputtering
Stoichiometry	TiN	TiN (can be tuned)
Film Thickness	0nm - 50nm	0nm - 200nm
Deposition rate	0.0173 nm/cycle on a flat sample 0.0232 nm/cycle on a high aspect ratio structures	up to 0.0625 nm/s on a flat sample
Step coverage	Very good	Not investigated
Process Temperature	450oC	400oC
Substrate size	Several small samples 1-5 50 mm wafers 1-5 100 mm wafers 1-5 150 mm wafer	Several small samples 100 mm wafer 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)	Silicon Silicon oxide, silicon nitride Quartz/fused silica Metals III-V materials (use dedicated carrier wafer) Almost anything that is not toxic.