Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec: Difference between revisions
m →Deposition rate: changed link title to be more descriptive |
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The deposition rate will also change with the settings. | The deposition rate will also change with the settings. | ||
The following data is from the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] | |||
'''Pressure <math>1*10^{-3}</math> mbar, | '''Pressure <math>1*10^{-3}</math> mbar, power 150 W''' | ||
The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge). | The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge). | ||
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'''Pressure <math>4*10^{-3}</math> mbar, | '''Pressure <math>4*10^{-3}</math> mbar, power 300 W''' | ||
The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge). | The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge). | ||
This corresponds to a deposition time of '''44 seconds''' for deposition of '''10 nm'''. | This corresponds to a deposition time of '''44 seconds''' for deposition of '''10 nm'''. | ||
Revision as of 14:38, 19 March 2020
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Deposition rate
Depending on the settings (pressure and effect) during the sputtering process, the uniformity and grain size of the deposited layer will be different (see study on Uniformity of sputtered chromium)
The deposition rate will also change with the settings.
The following data is from the Wordentec
Pressure mbar, power 150 W
The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge).
This corresponds to a deposition time of 1 minute 34 seconds for deposition of 10 nm.
Pressure mbar, power 300 W
The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge).
This corresponds to a deposition time of 44 seconds for deposition of 10 nm.