Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2/Images of 1SIO2mbr with burned resist mask: Difference between revisions

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=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned </span> =
=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned </span> =


===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===
===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===
''Berit Geilman Herstrøm (BGE) from Danchip@DTU''
''Berit Geilman Herstrøm (BGE) from Nanolab@DTU''


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Revision as of 17:24, 25 November 2019

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Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned

Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material

Berit Geilman Herstrøm (BGE) from Nanolab@DTU

Process date: Before 2004
Recipe: 1sio2mbr
Process time: ? min
Mask: Burned resist
Structure size on mask: 3 µm
Etch rate ~120nm/min