Specific Process Knowledge/Characterization: Difference between revisions
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===SEMs at CEN=== | ===SEMs at CEN=== | ||
*[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] | <!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] --> | ||
*[[LabAdviser/CEN/Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]] | *[[LabAdviser/CEN/Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]] | ||
*[[LabAdviser/CEN/Nova NanoSEM 600|SEM FEI Nova 600 NanoSEM]] | *[[LabAdviser/CEN/Nova NanoSEM 600|SEM FEI Nova 600 NanoSEM]] | ||
*[[LabAdviser/CEN/Quanta FEG 200 ESEM|SEM FEI Quanta 200 ESEM FEG]] | *[[LabAdviser/CEN/Quanta FEG 200 ESEM|SEM FEI Quanta 200 ESEM FEG]] | ||
*[[LabAdviser/CEN/Inspect S|SEM Inspect S]] | <!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] --> | ||
===SEMs at Danchip=== | ===SEMs at Danchip=== | ||
Revision as of 10:38, 7 February 2019
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Overview of characteristics and where to measure it
| Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Differential Scanning Calorimeter DSC | Surfscan | IR-camera | III-V ECV-profiler | |
| Breakdown voltage | ||||||||||||||||||||
| Carrier density/doping profile | x | |||||||||||||||||||
| Charge carrier life time | x | |||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
| Crystallinity | x | x | ||||||||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | |||||||||||||||
| Dimensions(height) | (x) | (x) | x | x | x | |||||||||||||||
| Electrical conductivity | x | |||||||||||||||||||
| Element analysis | x | x | x 4) | x 4) | ||||||||||||||||
| Film stress | x | x | ||||||||||||||||||
| Imaging | x | x | x | x | ||||||||||||||||
| Material Hardness | x | |||||||||||||||||||
| Band gap | x | x | ||||||||||||||||||
| Particles | x | x | x | x | ||||||||||||||||
| Phase changes | x | |||||||||||||||||||
| Reflectivity | x | x | x 6) | |||||||||||||||||
| Refractive index | x | x | ||||||||||||||||||
| Resistivity | x | |||||||||||||||||||
| Step coverage | x 1) | x 1) | ||||||||||||||||||
| Surface roughness | x | x | x | |||||||||||||||||
| Thermal conductivity | ||||||||||||||||||||
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||||
| Voids in wafer bonding | x | x | x | |||||||||||||||||
| Wafer thickness | x 1) | x 1) | x | |||||||||||||||||
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
SEMs at CEN
SEMs at Danchip
TEMs at CEN
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)