Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/With CSAR resist mask: Difference between revisions
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''Information given by Alberto Cagliani February 2015'' | ''Information given by Alberto Cagliani February 2015'' | ||
Revision as of 10:57, 28 January 2019
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Information given by Alberto Cagliani February 2015
Using the standard oxide recipe (SiO2_res) for 1 min the CSAR looked burned (test 2016-08-19 resist did not look burned after 1min) and could not be removed by CSAR stripper (AR600-71). Using the following settings the resist did not looked burned and could be removed by CSAR stripper:
| Parameter | Recipe name: |
|---|---|
| Coil Power [W] | 450 |
| Platen Power [W] | 80 |
| Platen temperature [oC] | 0 |
| He flow [sccm] | 174 |
| C4F8 flow [sccm] | 5 |
| H2 flow [sccm] | 4 |
| Pressure [mTorr] | 4 |
| Typical results | Negative Resist mask DANCHIP result |
|---|---|
| Etch rate of thermal oxide | ~105nm/min (<5% etch load) |
| Selectivity to CSAR [:1] | ~2 |
| Profile [o] | not measured |
| Images | none |
| Comments | CSAR did not burn and could be removed by AR600-71 |