Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Etch of Al2O3: Difference between revisions
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==Etching of micro structures in Aluminum oxide using the standard SiO2 recipe== | ==Etching of micro structures in Aluminum oxide using the standard SiO2 recipe== | ||
''by Fredrik Stöhr'' | ''by Fredrik Stöhr@danchipo.dtu.dk'' | ||
Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>, Alumina) can be etched with the standard recipe for silicon oxide etching. The parameters including the chuck temperature are identical to the recipe described above: '''SiO2_res'''. ''The etch is probably very physical and gives redeposition, so please consider using a Cl2 etch on the ICP metal instead (BGHE 2015-04-17)'' <br> | Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>, Alumina) can be etched with the standard recipe for silicon oxide etching. The parameters including the chuck temperature are identical to the recipe described above: '''SiO2_res'''. ''The etch is probably very physical and gives redeposition, so please consider using a Cl2 etch on the ICP metal instead (BGHE 2015-04-17)'' <br> |
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Etching of micro structures in Aluminum oxide using the standard SiO2 recipe
by Fredrik Stöhr@danchipo.dtu.dk
Aluminum oxide (Al2O3, Alumina) can be etched with the standard recipe for silicon oxide etching. The parameters including the chuck temperature are identical to the recipe described above: SiO2_res. The etch is probably very physical and gives redeposition, so please consider using a Cl2 etch on the ICP metal instead (BGHE 2015-04-17)
General Description
- Process date: Summer 2014
- Aluminum Oxide with a thickness of 50 nm has been deposited by atomic layer deposition using the respective standard recipe.
- Substrates: Blank 525 µm Silicon wafers or Silicon wafers with thermally grown Silicon Oxide prior to Alumina deposition.
- Mask: [XOP8] AZ5214E 1.5 µm thick (HMDS pretreatment, 6-inch aligner 3 sec exposure, 60 sec development).
- Etch Load (Total Exposed SiO2): ~ 5 %
- Post process: O2 Plasma Ashing 10 min