Specific Process Knowledge/Thin film deposition/DiamondCVD: Difference between revisions

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!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"| Crystal structure analysis and thin film thickness measurement
|style="background:LightGrey; color:black"| Diamond growth
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Single crystalline diamond
*Crystal Size
*Poly crystalline diamond
*Crystallinity
*Quality and degree of orientation
*3D orientation
*Latice strain
*Composition
*Twist
*3D lattice constant
*Thickness
*Roughness
*Density
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!style="background:silver; color:black" align="center" valign="center" rowspan="6"|X-ray generator
!style="background:silver; color:black" align="center" valign="center" rowspan="6"|Parameters
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Maximum rated output
H<sub>2</sub>
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|style="background:WhiteSmoke; color:black"|
3 kW
1000 sccm
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Rated tube voltage
CH<sub>4</sub>
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|style="background:WhiteSmoke; color:black"|
20 to 45 kV
50 sccm
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Rated tube current
O<sub>2</sub>
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2 to 60 mA
20 sccm
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Type
Operating pressure
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|style="background:WhiteSmoke; color:black"|
Sealed tube
>200 Torr
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Target
Power
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|style="background:WhiteSmoke; color:black"|
Cu
5000 W
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Focus size
Temperature
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|style="background:WhiteSmoke; color:black"|
0.4x8 mm (Line/Point)
700-900 °C
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!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Goniometer
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Scanning mode
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incident / receiver coupled or independent
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Goniomenter radius
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300 mm
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Minimum step size
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0.0001° (0.36")
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Sample stage
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*&chi;:-5~+95°
*&phi;:0~360°
*Z:-4~+1 mm
*X,Y:&plusmn;50 mm for a 100 mm wafer
*Rx,Ry:-5~+5°
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Sample size
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Diameter: 150 mm
Thickness: 0~21 mm
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Optics
|style="background:LightGrey; color:black"|Incident side
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*Cross Beam Optics(CBO)
*Ge(220)x2 monochromator
*In-Plane Parallel Slit Collimator (PSC)
*Soller slit
*Variable divergence slit
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|style="background:LightGrey; color:black"|Receiver side
|style="background:WhiteSmoke; color:black"|
*Automatic variable scattering slit
*Automatic variable receiver slit
*Parallel slit analysers (PSA)
*Ge(220)x2 analyser
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
up to 150 mm wafers
up to 100 mm wafers, 50 mm prefered
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
All materials
Ask
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Revision as of 12:11, 30 November 2018

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SEKI Diamond CVD

The user manual(s), user APV(s), technical information, and contact information can be found in LabManager:

XRD SmartLab in LabManager

Process information

Software for analysis

Equipment performance and process related parameters

Equipment SEKI AX5250S
Purpose Diamond growth
  • Single crystalline diamond
  • Poly crystalline diamond
Parameters

H2

1000 sccm

CH4

50 sccm

O2

20 sccm

Operating pressure

>200 Torr

Power

5000 W

Temperature

700-900 °C

Substrates Substrate size

up to 100 mm wafers, 50 mm prefered

Allowed materials

Ask


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