Specific Process Knowledge/Thin film deposition/DiamondCVD: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:WhiteSmoke; color:black"|<b> | |style="background:WhiteSmoke; color:black"|<b>SEKI AX5250S</b> | ||
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!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose |
Revision as of 11:58, 30 November 2018
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SEKI Diamond CVD
The user manual(s), user APV(s), technical information, and contact information can be found in LabManager:
Process information
Software for analysis
Equipment | SEKI AX5250S | |
---|---|---|
Purpose | Crystal structure analysis and thin film thickness measurement |
|
X-ray generator |
Maximum rated output |
3 kW |
Rated tube voltage |
20 to 45 kV | |
Rated tube current |
2 to 60 mA | |
Type |
Sealed tube | |
Target |
Cu | |
Focus size |
0.4x8 mm (Line/Point) | |
Goniometer |
Scanning mode |
incident / receiver coupled or independent |
Goniomenter radius |
300 mm | |
Minimum step size |
0.0001° (0.36") | |
Sample stage |
| |
Sample size |
Diameter: 150 mm Thickness: 0~21 mm | |
Optics | Incident side |
|
Receiver side |
| |
Substrates | Substrate size |
up to 150 mm wafers |
Allowed materials |
All materials |