Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions

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The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness.
The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness.
   
   
For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured. Furthermore the side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.
For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured.  
 
Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.


Full acceptance test report here:  
Full acceptance test report here:  
[[:File:Temescal Acceptance Test Results Mar-April-May 2018.pdf]]
[[:File:Temescal Acceptance Test Results Mar-April-May 2018.pdf]]

Revision as of 14:55, 12 September 2018

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Acceptance test and test results

Topics:

  • Vacuum performance
  • Ion beam etching of SiO2
  • E-beam testing: Ti/Au and Ti/Ni deposition

The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness.

For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured.

Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.

Full acceptance test report here:

File:Temescal Acceptance Test Results Mar-April-May 2018.pdf

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