Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2/Images of 1SIO2mbr with burned resist mask: Difference between revisions

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=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned </span> =


===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===
===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===

Revision as of 14:57, 7 May 2018

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Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned

Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material

Berit Geilman Herstrøm (BGE) from Danchip@DTU

Process date: Before 2004
Recipe: 1sio2mbr
Process time: ? min
Mask: Burned resist
Structure size on mask: 3 µm
Etch rate ~120nm/min