Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/SOI/SOI: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
<!-- Ok, jmli 20170627 --> | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | ||
|+ '''Process runs''' | |+ '''Process runs''' | ||
Revision as of 11:36, 27 June 2017
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 15/12-2014 | 4" Wafer with travka65 mask | AZ standard | Si / 65 % | Pegasus/jmli | 10 minute TDESC clean | danchip/jml/showerhead/SOI/SOI, 96 cyc or 8:00 mins | S004745 | New showerhead |
|
