Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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{| border="1" cellspacing="2" cellpadding="2"
|-style="background:Black; color:White"
! Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask) 
|-
|Coil Power [W]
|1300
|-
|Platen Power [W]
|200
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|He flow [sccm]
|174
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|5
|-
|H<sub>2</sub> flow [sccm]
|4
|-
|Pressure [mTorr]
|4
|-
|}
===Etch rates in different materials using the standard "Silicon oxide etch with resist mask" ===
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Etch rate using SiO2_res
|-
|Thermal oxide
|
*'''~230nm/min (5% etch load)''' -  etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
*200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|TEOS oxide (5% load)
|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
|-
|PECVD1 (standard) oxide (5% load)
|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
|-
|Al2O3 from the ALD
|
*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
|-
|Silicon rich nitride from furnace B2
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
|-
|Cr
|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|Al
|18nm/min (1:11 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|}
<br clear="all" />

Revision as of 14:55, 20 January 2017

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THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

Parameter Recipe name: SiO2_res (SiO2 etch with resist mask)
Coil Power [W] 1300
Platen Power [W] 200
Platen temperature [oC] 0
He flow [sccm] 174
C4F8 flow [sccm] 5
H2 flow [sccm] 4
Pressure [mTorr] 4


Etch rates in different materials using the standard "Silicon oxide etch with resist mask"

Material to be etched Etch rate using SiO2_res
Thermal oxide
  • ~230nm/min (5% etch load) - etch load dependency see here
  • 200 nm/min fall 2016 by Martin Lind Ommen @nanotech
TEOS oxide (5% load) 233nm/min ±0.7% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
PECVD1 (standard) oxide (5% load) 242nm/min ±0.6% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
Al2O3 from the ALD
  • 34.2 nm/min (1:6 to SiO2) fall 2016 by Martin Lind Ommen @nanotech
  • 50nm can be etched in 10min - See results here etched in November 2014 by FRSTO@danchip
Silicon rich nitride from furnace B2 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@danchip
Cr 6 nm/min (1:33 to SiO2) fall 2016 by Martin Lind Ommen @nanotech
Al 18nm/min (1:11 to SiO2) fall 2016 by Martin Lind Ommen @nanotech


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