Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec: Difference between revisions
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== Deposition rate == | == Deposition rate == | ||
Depening on the settings (pressure and effect) during the sputtering process, '''the uniformity and grain size of the deposited layer will be different''' (see[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Chromium/Deposition_of_Chromium| Deposition of Chromium]]) | Depening on the settings (pressure and effect) during the sputtering process, '''the uniformity and grain size of the deposited layer will be different''' (see[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Chromium/Deposition_of_Chromium| Deposition of Chromium]]) | ||
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Deposition rate
Depening on the settings (pressure and effect) during the sputtering process, the uniformity and grain size of the deposited layer will be different (see Deposition of Chromium)
The deposition rate will also change with the settings.
Pressure mbar, Effect 150 W
The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge).
This corresponds to a deposition time of 1 minute 34 seconds for deposition of 10 nm.
Pressure mbar, Effect 300 W
The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge).
This corresponds to a deposition time of 44 seconds for deposition of 10 nm.