Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/With CSAR resist mask: Difference between revisions
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''Information given by Alberto Cagliani February 2015'' | ''Information given by Alberto Cagliani February 2015'' | ||
Using the standard oxide recipe (SiO2_res) for 1 min the CSAR looked burned and could not be removed by CSAR stripper (AR600-71). | Using the standard oxide recipe (SiO2_res) for 1 min the CSAR looked burned (test 2016-08-19 resist did not look burned after 1min) and could not be removed by CSAR stripper (AR600-71). | ||
Using the following settings the resist did not looked burned and could be removed by CSAR stripper: | Using the following settings the resist did not looked burned and could be removed by CSAR stripper: | ||
Revision as of 13:46, 19 August 2016
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Information given by Alberto Cagliani February 2015
Using the standard oxide recipe (SiO2_res) for 1 min the CSAR looked burned (test 2016-08-19 resist did not look burned after 1min) and could not be removed by CSAR stripper (AR600-71). Using the following settings the resist did not looked burned and could be removed by CSAR stripper:
Parameter | Recipe name: |
---|---|
Coil Power [W] | 450 |
Platen Power [W] | 80 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
C4F8 flow [sccm] | 5 |
H2 flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Negative Resist mask DANCHIP result |
---|---|
Etch rate of thermal oxide | ~105nm/min (<5% etch load) |
Selectivity to CSAR [:1] | ~2 |
Profile [o] | not measured |
Images | none |
Comments | CSAR did not burn and could be removed by AR600-71 |