Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation: Difference between revisions
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==Sidewall roughness effected by UV curing and heat treatment of AZ5214E resist [[Image:section under construction.jpg|70px]]== | ==Sidewall roughness/resist surface roughness effected by UV curing and heat treatment of AZ5214E resist [[Image:section under construction.jpg|70px]]== | ||
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Revision as of 12:43, 18 April 2016
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Striation: Side wall roughness
Sidewall roughness and resist surface after etch viewed with SEM
- Striation with different resists used
Az resist
Az resist
Az resist
Az resist - profile after etch
Mir resist
Mir resist
Mir resist
Mir resist - profile after etch
nLof
nLof
nLof
nLof resist - profile after etch
Roughness of the resist after etch measured with the AFM
AZ5214E:Ra=3.98nm, Rmax=33,0nm
AZ MIR: Ra=4.55nm, Rmax=36.3nm
AZ nLof 2020: Ra=3.31nm, Rmax=28.0nm
Sidewall roughness/resist surface roughness effected by UV curing and heat treatment of nLof resist 
| AOE etch with nLof resist with different treatments | |||||
| 1 | 2 | 3 | 4 | 5 | |
|---|---|---|---|---|---|
| Treatment | No treatment before AOE etch | No treatment after 5min AOE etch | Flood-E 70s + 1min@110dg | 5min@150dg | Flood-E 70s + 60s@110dg + 5min@150dg |
| SEM image | 
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| AFM roughness scan | Ra=2.1nm Rmax=25.1nm 
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Ra=3.31nm Rmax=28.0nm 
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Ra=3.34nm Rmax=26.8nm 
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Ra=2.45nm, Rmax=19.4nm 
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Ra=2.52nm, Rmax=23.7nm 
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| D | D1 | D2 | D3 | D4 | D5 |
Sidewall roughness/resist surface roughness effected by UV curing and heat treatment of AZ5214E resist
| AOE etch with AZ5214E resist with different treatments | |||||
| 1 | 2 | 3 | 4 | ||
|---|---|---|---|---|---|
| Treatment | No treatment before AOE etch | No treatment after 5min AOE etch | Flood-E 55s + 120s@110dg | Flood-E 55s + 120s@110dg + 5min@150dg | |
| SEM image | 
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| AFM roughness scan | Pre etch: cannot measure | Ra=4.40nm, Rmax=36.5nm 
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Ra=3.68nm, Rmax=25.6nm 
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Ra=3.57nm, Rmax=28.5nm 
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| D | D1 | D2 | D3 | D4 | |